专利摘要:
The invention relates to a microelectromechanical device (100) with at least two sensor devices (108, 105a) arranged on a substrate (101), wherein a decoupling device (104a, b), for example a trench, is arranged between at least two sensor devices (108, 105a) Reduction of a mechanical transverse effect.
公开号:CH711584A2
申请号:CH00866/16
申请日:2016-07-07
公开日:2017-03-31
发明作者:Sebastian Frey Tobias;Mitschke Michaela;Mogor Gyorffy Robert;Zehringer Stefan;Franz Jochen
申请人:Bosch Gmbh Robert;
IPC主号:
专利说明:

Description: [0001] The present invention relates to a microelectromechanical device and a manufacturing method for a microelectromechanical device.
PRIOR ART [0002] Due to the increasing miniaturization of microelectromechanical systems (MEMS), it is possible to arrange several sensors together on a substrate.
[0003] Sensors of this type comprise, for example, sound, in particular body-borne sound sensors, radiation sensors, but also moisture and pressure measurement sensors.
From WO 2014/0666 768 A2, a combined sensor device is known which comprises both a pressure sensor and a moisture sensor on a common substrate.
[0005] However, this increasing miniaturization also results in cross-effects due to a mutual influencing of the respective sensors.
[0006] For example, a possible mode of operation of a moisture sensor is based on the moisture absorption, which causes a change in the relative permittivity, which can be detected by means of a capacitive method. As a secondary effect, a change in the volume or a swelling of the moisture-sensitive material occurs as a result of the moisture absorption. This volume change is generally also transmitted to an adjacent sensor, for example a pressure sensor, which impairs the precision of the pressure sensor.
DISCLOSURE OF THE INVENTION [0007] The present invention provides a microelectromechanical device having the features of claim 1 and a manufacturing method for a microelectromechanical device having the features of patent claim 8.
[0008] According to a first aspect, the present invention provides a microelectromechanical device, comprising at least two sensor devices arranged on a substrate, a decoupling device being arranged between at least two sensor devices at least in sections for reducing a mechanical transverse effect.
According to a second aspect, the present invention provides a manufacturing method for a microelectromechanical device, comprising the steps of: placing a first sensor device, in particular a pressure sensor, on a substrate, arranging at least one second sensor device, in particular a moisture sensor, And forming at least one decoupling device for reducing a mechanical transverse effect.
[0010] Preferred further developments are the subject of the respective subclaims.
ADVANTAGES OF THE INVENTION The microelectromechanical device according to the invention has the advantage that different sensors, for example both a pressure sensor and a moisture sensor, can be arranged side by side on a substrate in a small space. An undesired mechanical transverse effect, for example an influence on the pressure sensor by a stress input into the substrate due to the mode of action of the moisture sensor, is reduced since the pressure sensor is at least partially separated from the moisture sensors by a decoupling device, for example a trenching. Both the pressure sensor and the humidity sensor can therefore provide precise measurement results. At the same time, the microelectromechanical device can be miniaturized,
According to a further aspect, the present invention provides a microelectromechanical device, comprising a pressure sensor arranged on a substrate, at least one moisture sensor arranged on the substrate, wherein at least one separating trench for reducing a mechanical load is arranged between the moisture sensor and the pressure sensor is trained.
[0013] According to a further development, the decoupling device comprises at least one trench.
According to a further development, the sensor devices comprise a pressure sensor for capacitive and / or piezoresistive pressure measurement and at least one moisture sensor.
According to a further development, the moisture sensor has at least one plate capacitor, which means a stack consisting of metal, a moisture-sensitive layer and a further metal layer.
[0016] According to a further development, the pressure sensor has a diaphragm and piezoresistive resistors.
[0017] According to a further development, the moisture sensor has comb-shaped electrodes and a moisture-sensitive structure, in particular a polyimide layer.
According to a further development, the pressure sensor is of rectangular design and the comb-shaped electrodes are aligned in such a way that teeth of the comb-shaped electrodes each enclose a non-vanishing angle with lateral surfaces of the pressure sensor.
According to a further development, the pressure sensor is of square design and the moisture sensors are arranged mirror-symmetrically about at least one of the four symmetry axes of the pressure sensor around the pressure sensor. The increased symmetry results in a more uniform coupling of the remaining mechanical stress, which has not yet been eliminated by the trenches, or the voltage from the moisture sensors to the pressure sensor. A pressure sensor error can thereby be additionally reduced.
According to a further development of the manufacturing method, the decoupling device comprises a trench which is formed by means of trench etching or KOH etching.
According to a further development of the production method, a form of the moisture sensors, in particular a ratio of the width to height of the moisture sensor, is set such that the absolute magnitude of a pressure measuring error of the pressure sensor is minimized compared to a reference measurement. The specific choice of the geometry of the moisture sensors influences a value of the pressure error. Therefore, by optimizing the geometric shape of the moisture sensors, the error can be minimized.
According to a further development of the manufacturing method, the moisture sensor is formed with comb-shaped electrodes and a polyimide layer, the comb-shaped electrodes being aligned in such a way that teeth of the comb-shaped electrodes each enclose a non-vanishing angle with the side surfaces of the pressure sensor Are such that the absolute magnitude of a pressure measurement error of the pressure sensor is minimized compared to a reference measurement. By selecting appropriate non-vanishing angles, a residual cross-flow can be minimized. The angles thereby influence a coupling-in direction of the mechanical load.
BRIEF DESCRIPTION OF THE DRAWINGS [0023] FIG.
FIG. 1 is a schematic plan view of a microelectromechanical device according to an embodiment of the present invention; FIG.
FIG. 2 is a schematic cross-sectional view of the microelectromechanical device according to FIG. 1;
FIG. 3 is a schematic plan view of a moisture sensor; FIG.
FIGS. 4, 5, 6, 8 show schematic plan views of microelectromechanical devices according to further embodiments of the present invention;
FIG. 7 is a diagram illustrating the relationship between the pressure error and the shape of the humidity sensors; FIG.
FIG. 9 is a diagram illustrating the relationship between a pressure measurement error and a distance between the pressure sensor and the moisture sensor; FIG. and
FIG. 10 is a flowchart for explaining a manufacturing method for a microelectromechanical device
Device according to an embodiment of the present invention.
[0024] In all the figures, the same or functionally equivalent elements and devices are provided with the same reference symbols, unless stated otherwise. The numbering of method steps serves for the sake of clarity and is not intended, in particular, to imply a specific chronological order, unless otherwise specified. In particular, several process steps can also be carried out simultaneously.
DESCRIPTION OF THE EXEMPLARY EMBODIMENTS FIG. 1 shows a schematic plan view of a microelectromechanical device 100 according to an embodiment of the present invention. A printing sensor 108 is arranged on a substrate 101, in particular a silicon substrate. The pressure sensor has a square diaphragm 102 embedded in the substrate as illustrated in FIG. 2, wherein FIG. 2 is a cross-sectional view taken along an axis 107. A first axis of symmetry 401 of the square diaphragm 102 which extends through a first side face 108a and an opposite second side face 108b of the diaphragm and a second axis of symmetry 402 of the square diaphragm 102 which extends through a third side face 108c and a fourth side face 108d of the diaphragm , Are shown in FIG.
A first piezoresistive resistor 103a and an opposing second piezoresistive resistor 103b are located above the diaphragm 102 along the first axis of symmetry 401 in a respective middle region near the four side faces of the square pressure sensor 108. A third piezoresistive resistor 103c and a fourth piezoresistive resistor 103d are arranged along the second axis of symmetry 402, the piezoresistive resistors 103a to 103d being arranged mirror-symmetrically with respect to the first symmetry axis 401 and the second axis of symmetry 402, respectively.
The first and second piezoresistive resistors 103a and 103b as well as the third and fourth piezoresistive resistors 103c and 103d are connected to each other via a voltage measuring device. By measuring the voltage change, a pressure on the diaphragm 102 can thus be determined.
Bond pads 106 are further located on the substrate. The microelectromechanical device can, in particular, comprise further components, such as, for example, diodes. A first moisture sensor 105a and a second humidity sensor 105b are located on a side of the pressure sensor 108 opposite the bond pads 106. The moisture sensors 105a and 105b are rectangular and have a width parallel to the second axis of symmetry 402 and a height d2 parallel to the first axis of symmetry 401 and are arranged mirror symmetrically with respect to the second symmetry axis 402. The moisture sensors 105a and 105b have a distance d3 measured parallel to the second axis of symmetry 402.
The moisture sensors 105a and 105b, as illustrated in FIG. 2, comprise a polyimide layer 201, which is arranged on a comb-shaped first electrode 301 and a comb-shaped second electrode 302. The first electrode 301 has teeth 202a which are toothed with teeth 202b of the second electrode 302. The teeth 202, consisting of teeth 202a of the first electrode 301 and teeth 202b of the second electrode, extend parallel to the first axis of symmetry 401.
[0030] If the electromechanical device 100 is in a humid environment, the polyimide layer 201 absorbs moisture, thereby changing the relative permittivity of the moisture-sensitive layer. This change can be ascertained by means of a capacitive measuring principle and thus to the moisture. As a secondary effect, a change in the volume of the polyimide layer 201 occurs which leads to a stress entry into the chip which worsens the accuracy of the pressure sensor.
A first trench 104a is formed between the pressure sensor 108 and the first moisture sensor 105a, and a second trench 104b is formed between the pressure sensor 108 and the second moisture sensor 105b, the trenches 104a and 104b being parallel to the first axis of symmetry 401 and mirror-symmetrical relative to one another Of the second axis of symmetry 402. The trenches 104a and 104b can in particular be trench trenches which are formed by trench etching. However, the trenches can also be formed by KOH etching. A distance between the trenches 104a and 104b from the second axis of symmetry 402 is equal to a distance between the moisture sensors 105a and 105b from the second axis of symmetry 402,
[0032] The invention is not limited to this. Thus, a single trench may also be formed between the pressure sensor 108 and the humidity sensors 105a and 105b.
The invention is not limited to pressure and humidity sensors, but may also refer to arbitrary combinations of any number of gas sensors, sound sensors, body-borne sound sensors, radiation sensors, moisture sensors, inertial sensors and pressure measurement sensors.
The moisture sensors can, for example, also be designed as plate capacitors.
FIG. 4 shows a plan view of a microelectromechanical device 400 according to a further embodiment of the present invention. The microelectromechanical device 100 further comprises a third moisture sensor 105c and a fourth humidity sensor 105d, a third trench 104c and a fourth trench 104d being arranged between the pressure sensor 108 and the third humidity sensor 105c and the fourth humidity sensor 105d, respectively.
The arrangement of the moisture sensors is hereby symmetrical with respect to the first axis of symmetry 401 and the second axis of symmetry 402 of the pressure sensor 108. That is, the first moisture sensor 105a and the third humidity sensor 105c are connected to the second humidity sensor 105b and the second axis of symmetry 402, Fourth moisture sensor 105d is mirror symmetrically arranged. Further, the first moisture sensor 105a and the second humidity sensor 105b are mirror symmetrically arranged with respect to the first axis of symmetry 401 to the third humidity sensor 105c and the fourth humidity sensor 105d, respectively.
FIG. 5 illustrates a plan view of a microelectromechanical device 500 according to a further embodiment of the present invention. First to fourth moisture sensors 505a to 505d are in each case L-shaped in this case, L-shaped trenches 506a to 506d also being located between pressure sensor 108 and respective humidity sensors 505a to 505d. The moisture sensors 505a to 505d and the trenches 506a to 506d are arranged in each case in a corner area of ​​the square-shaped diaphragm 102 of the pressure sensor 108 in such a way that the moisture sensors 505a to 505d and the trenches 506a to 506d are arranged mirror-symmetrically with respect to the first axis of symmetry 401 of the second symmetry axis 402 And third and fourth axes of symmetry 403 and 404,
Due to the symmetrical arrangement, a remaining coupling of a mechanical load from the moisture sensors 105a to 105d, which is not yet completely prevented by the trenches 506a to 506d, is thus made more uniform, as a result of which an accuracy of the pressure sensor 108 is increased.
FIG. 6 shows a plan view of a microelectromechanical device 600 according to a further embodiment of the present invention. First and second humidity sensors 605a and 605b according to this embodiment have a smaller width di and a greater height d2 than the first and second humidity sensors 105a and 105b shown in FIG. 1, compared to the embodiment shown in FIG. The shape of the moisture sensors 605a and 605b has an influence on a pressure measurement error Δρ of the pressure sensor 108. In FIG. 7, the pressure measurement error Δρ of the pressure sensor 108 is represented as a function of a ratio x from the width di to the height d2 of the humidity sensors 105a to 105d. The embodiment shown in FIG. 1 lead to a positive pressure measurement error 701 at a predetermined humidity value, ie the pressure P measured by the pressure sensor 108 is higher than a pressure which is measured during a reference measurement, the reference measurement being carried out with a pressure sensor In which there are no adjacent moisture sensors, so that an influence of the moisture on the pressure sensor can be excluded. In the narrower and higher humidity sensors 605a and 605b shown in FIG. 6, a negative pressure measuring error 702 as shown in FIG. 7 is measured. Wherein the reference measurement is carried out with a pressure sensor in which there are no adjacent moisture sensors so that an influence of the humidity on the pressure sensor can be excluded. In the narrower and higher humidity sensors 605a and 605b shown in FIG. 6, a negative pressure measuring error 702 as shown in FIG. 7 is measured. Wherein the reference measurement is carried out with a pressure sensor in which there are no adjacent moisture sensors so that an influence of the humidity on the pressure sensor can be excluded. In the narrower and higher humidity sensors 605a and 605b shown in FIG. 6, a negative pressure measuring error 702 as shown in FIG. 7 is measured.
A shape of the moisture sensors, in particular a height d2 and a width di, is preferably set such that the absolute value of the pressure measurement error Δρ of the pressure sensor is minimized, ie the pressure measurement error Δρ is, for example, equal to zero, which corresponds to the point 703 ,
[0040] The corresponding ideal shape can depend on the pressure range to be measured. Usually, however, the shape can be selected such that a pressure measurement error Δρ of the pressure sensor 108 is in a wide measuring range at a low value, for example in a value interval -0.01 <Δρ / hPa <0.01. According to a further embodiment, the mold can also be adjusted for a specific predetermined moisture value in such a way that the pressure measurement error Δρ disappears.
FIG. 8 shows a plan view of a pressure measuring sensor 800 according to a further embodiment of the present invention. A first moisture sensor 805a lying above the first axis of symmetry 401 is arranged in such a way that the teeth 202 of the comb-shaped electrodes 301 and 302 have a first angle di with a first axis 801 extending parallel to the first symmetry axis 401 by a center of the first moisture sensor 805a Of the pressure sensor 108. Further, the teeth 202 of the comb-shaped electrodes 301 and 302 of the first moisture sensor 805a include a second angle a2 with a second axis 802 extending parallel to the second axis of symmetry 402 of the pressure sensor 108 through a center of the first moisture sensor 805a.
The angles a-, and 0¾ are preferably selected in such a way that the absolute magnitude of a pressure measuring error Δρ of the pressure sensor is minimized compared to a reference measurement. Preferably, the pressure measurement error Δρ of the pressure sensor 108 becomes equal to zero. As described above, the pressure measurement error is measured by comparison with a reference measurement, the reference measurement being carried out with a pressure sensor with no adjacent humidity sensors.
9 illustrates the dependency of the pressure measuring error Δρ on the distance d 3 of the moisture sensors 105 a to 105 d from the pressure sensor 108. It can be seen that the pressure measurement error Δρ decreases with increasing distance d3 of the moisture sensors from the pressure sensor 108. Preferably, therefore, the distance d3 is selected to be large enough.
FIG. 10 shows a flow diagram for explaining a manufacturing method for a microelectromechanical device 100. The manufacturing method comprises a first step S1 of placing a first sensor 108, for example a pressure sensor 108, on a substrate 101. The pressure sensor 108 is preferably one In FIG. 1 and described above, with piezoresistive resistors 103a to 103d and a preferably square diaphragm 102.
[0045] In a second step S2, at least one second sensor, for example a moisture sensor, is arranged on the substrate 101.
In a third step S3, at least one trench is formed, for example, by trench etching, KOH etching or laser etching, a trench being formed at least partially between sensors, for example between the moisture sensors and the pressure sensor.
[0047] Preferably, a number of the moisture sensors and an array of moisture sensors correspond to one of the microelectromechanical devices described in the above embodiments. Preferably, in particular, a form of the moisture sensors, in particular a ratio of the width b-1 to the height d 2, of the moisture
权利要求:
Claims (11)
[1] 1. Microelectromechanical device (100; 400; 500; 600; 800), having at least two sensor devices (108, 105a-d; 505a to 505d) arranged on a substrate (101), A decoupling device (104a to d; 506a to 506d) for reducing a mechanical transverse effect is arranged at least in sections between two sensor devices (108, 105a-d; 505a to 505d; 605a, 605b; 805a, 805b).
[2] 2. The microelectromechanical device as claimed in claim 1, wherein the decoupling device comprises at least one trench.
[3] 3. The microelectromechanical device as claimed in claim 1, wherein the sensor devices comprise a pressure sensor Capacitive and / or piezoresistive pressure measurement and at least one humidity sensor (105a to d; 505a to 505d; 605a, 605b; 805a, 805b).
[4] 4. The microelectromechanical device according to claim 3, wherein the moisture sensor comprises at least one plate capacitor
[5] 5. The microelectromechanical device according to claim 3, wherein the moisture sensor comprises comb-shaped electrodes and a moisture-sensitive structure.
[6] 6. The microelectromechanical device as claimed in claim 3, wherein the pressure sensor and the comb-shaped electrodes are aligned in such a way that the teeth of the comb-shaped electrodes are aligned with one another ) And the side faces (108a to d) of the pressure sensor (108) each enclosing a non-vanishing angle (a1 A2).
[7] 7. The microelectromechanical device as claimed in claim 3, wherein the pressure sensor and the moisture sensors are mirror-symmetrical. (DE) Are arranged around the pressure sensor (108) with respect to at least one of the four symmetry axes (501 to 504) of the pressure sensor (108).
[8] 8. A method for manufacturing a microelectromechanical device comprising the steps of: arranging (S1) from a first sensor device (108), in particular a pressure sensor (108), on a substrate (101) (505a to 505d, 605a, 605b, 805a, 805b) on the substrate (S2) from at least one second sensor device (105a to d, 505a to 505d, 605a, 605b; 805a, 805b) (101), forming (S3) at least one decoupling device (104a to d; 506a to 506d) for reducing a mechanical transverse effect, at least in sections between the first sensor and the second sensor.
[9] 9. The manufacturing method according to claim 8, wherein the decoupling device comprises a trench which is formed by means of trench etching or KOH etching.
[10] 10. The manufacturing method as claimed in claim 8, wherein a form of the moisture sensors (105a to d; 505a to 505d; 605a, 605b; 805a, 805b), in particular a ratio (x) of width (bi) to height (d2) Wherein the absolute magnitude of a pressure measurement error (Δρ) of the pressure sensor (108) is minimized compared to a reference measurement. (DE). WIPO Home services World Intellectual Property Organization
[11] 11. The manufacturing method according to claim 8, wherein the moisture sensor is formed with comb-shaped electrodes and a moisture-sensitive layer, the comb-shaped electrodes ( Characterized in that the teeth (202) of the comb-shaped electrodes (301, 302) each enclose a non-vanishing angle (α-1, a2) with the side surfaces (108a to d) of the pressure sensor (108) ) Are selected in such a way that the absolute value of a pressure measurement error (Δρ) of the pressure sensor (108) is minimized compared to a reference measurement.
类似技术:
公开号 | 公开日 | 专利标题
EP2806258B1|2018-09-12|Differential pressure sensor
EP3248936B1|2021-01-27|Mems pressure sensor and mems inertial sensor integration structure
US8689633B2|2014-04-08|Micromechanical system
US10330548B2|2019-06-25|Capacitive pressure difference sensor and method for its manufacture
JP3941694B2|2007-07-04|Acceleration sensor
US20190383676A1|2019-12-19|Integrated digital force sensors and related methods of manufacture
US7051595B2|2006-05-30|Monolithic multi-functional integrated sensor and method for fabricating the same
JP6461566B2|2019-01-30|Pressure sensor with built-in calibration function
US10466119B2|2019-11-05|Ruggedized wafer level MEMS force sensor with a tolerance trench
KR102361998B1|2022-02-10|Sensor chip
US9446938B2|2016-09-20|SOI substrate, physical quantity sensor, SOI substrate manufacturing method, and physical quantity sensor manufacturing method
US8511168B2|2013-08-20|Sensor element for capacitively measuring differential pressure
US20160341759A1|2016-11-24|Sensor and method of manufacturing same
CH711584A2|2017-03-31|Microelectromechanical device and corresponding manufacturing method.
KR101892793B1|2018-10-04|Sensor package
US8220337B2|2012-07-17|Micromechanical sensor element for capacitive pressure detection
JP4540775B2|2010-09-08|Servo capacitive vacuum sensor
EP3301072A1|2018-04-04|Semiconductor device and method for forming a semiconductor device
US20210199527A1|2021-07-01|Low-pressure sensor with stiffening ribs
JP2016138844A|2016-08-04|Strain sensor
US20070062294A1|2007-03-22|Pressure sensor and method for manufacturing pressure sensor
JP2009164335A|2009-07-23|Method of inspecting electronic component, electronic component, and method of manufacturing electronic component
KR101125054B1|2012-03-21|Structure and fabrication method and detection method for micro multi device
JP2010002421A|2010-01-07|Servo electrostatic capacitance type vacuum sensor
CN111825054A|2020-10-27|Stress decoupling and particle filter integration
同族专利:
公开号 | 公开日
DE102015218662A1|2017-03-30|
CH711584B1|2020-09-30|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题

EP2912426B1|2012-10-25|2019-08-07|Robert Bosch GmbH|Combined pressure and humidity sensor|
法律状态:
优先权:
申请号 | 申请日 | 专利标题
DE102015218662.8A|DE102015218662A1|2015-09-29|2015-09-29|Microelectromechanical device and corresponding manufacturing method|
[返回顶部]